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A--SILICON CARBIDE HIGH-VOLTAGE POWER TECHNOLOGY

Solicitation Number: W911NF-13-R-0002
Agency: Department of the Army
Office: Army Contracting Command
Location: ACC-APG - RTP
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W911NF-13-R-0002
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Combined Synopsis/Solicitation
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Added: Jan 28, 2013 3:26 pm
This is a combined synopsis/solicitation for commercial items prepared in accordance with the format in Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; proposals are being requested and a written solicitation will not be issued.

The Silicon Carbide (SiC) High-Voltage Power Technology (HVPT) is an applied research effort focused on extending the state-of-the-art (SOA) in SiC semiconductor switch design, epitaxial material growth ( greater than 100 micrometers), semiconductor device fabrication, and multi-die packaging for high-voltage (HV) applications. Proposals are solicited that show a path forward to increased current density (at high-efficiency), die size, switching frequency, and blocking voltage ( greater than 10 kV) for both low- and high-duty-cycle switches. SiC is an emerging power semiconductor material that has electrical, thermal, and mechanical properties that allow it to far surpass the performance of conventional silicon (Si) power technology and make it the prime candidate for next-generation high-voltage switching devices for military, as well as commercial, applications.

Proof-of-concept, SiC high-voltage power devices have been demonstrated to provide greater than twice the power density of Si power devices and at greater efficiency. This program endeavors to advance the United States' capability to provide SiC HV high-power semiconductor switches; to identify limitations that must be overcome to attain the next high-water mark in SiC device high-voltage performance and; advance the United States' capability to provide high-voltage semiconductor device packaging solutions. Technology limitations/gaps identified by this program may be the focus of more sustained development efforts in the future.

The U.S. Army Contracting Command - Aberdeen Proving Ground, Research Triangle Park Division, on behalf of the U.S. Army Research Laboratory, Sensors and Electron Devices Directorate (SEDD) is soliciting proposals for the SiC HVPT program under Topic 1.4.3, quote mark Wide Band-Gap Power Devices, quote mark of the ARL Core Broad Agency Announcement (BAA) for Basic and Applied Scientific Research for Fiscal Years 2012 through 2017 at W911NF-12-R-0011.

Solutions are sought for the development of SiC HV bi-polar, semiconductor switches with ultimate single die blocking voltages in the range of 15,000 V to 24,000 V and current capacity of 10 A. These switches should be capable of turn-off at the maximum conduction current rating. The Army is considering several application examples wherein HV switches are utilized. One application requires switches to operate in a totem-pole configuration at +15,000 V and -10,000 V, 30 A (peak), and a frequency of 35 kHz. A second application requires power switches and diodes to control the discharge of 20 kV storage capacitors (microsecond discharge time) in a Marx-type power supply with 10 A average current and 100 A short-circuit currents. It is anticipated that, over the period of performance, the Recipient(s) will be able to demonstrate incremental device performance and fabrication capabilities and/or improvements thereof. Because component packaging is also a thrust of this program, Recipient(s) will develop and demonstrate packaging concepts that provide for voltage isolation, heat transfer, current, and frequency such that the SiC device performance is not limited by the packaging approach and minimize total volume. As the Recipient provides device deliverables to the Government, characterizations of the switches and the appropriate HV packaging will enable the Army to assess the state-of-the-art in HV semiconductor switch technology and provide power devices for demonstration circuits that will strive to meet Army requirements.

Since the HVPT program goals align well with future SiC high-voltage commercial applications, it is expected that the Recipient will include matching funds of no less than 25% in their proposal plans. There will be no equipment purchases using federal funds associated with awards made as a result of this announcement.

Funding is currently available for the award of up to two cooperative agreements related to the SiC HVPT program for these Fiscal Year (FY) 2012 funds. While the BAA and Topic remain open for proposal submission until, 31 March 2017, in order to be eligible for the agreement to be awarded with the available funding, proposals must be received in accordance with the due dates and instructions provided in this announcement. It is anticipated that up to two quote mark cooperative agreements quote mark (31 USC 6305) will be awarded, pursuant to 10 USC 2358 Research Projects, each with a period of performance between twelve and eighteen months. The total amount available for the award(s) is approximately $3,000,000.00. The principal purpose of the cooperative agreements is for the public purpose of the support and stimulation of fundamental research and not the acquisition of property or provision of services for the direct benefit or use of the Government. The Recipient of the cooperative agreements will work collaboratively with scientists from ARL to further the SiC HVPT program. ARL will participate in the research and use its strong in-house technical expertise to jointly plan and execute the research program with the Recipient. ARL will evaluate the fabricated power devices to Army-specific circuit stresses and analyze the devices' electrical and physical response. These analyses and supporting data will be shared with the Recipient and ways to augment the device design, process and or starting material to improve performance will be jointly determined. ARL's Device Reliability Physics, Pulse Switches and Circuit teams will participate in this collaboration.

In order to be eligible for the cooperative agreements to be awarded with the available funding for this program, offerors are to submit proposals in accordance with the submissions instructions under BAA W911NF-12-R-0011 no later than 28 February 2013. Proposals will be evaluated using the criteria listed in the BAA. Any Questions concerning the award(s) process shall be directed to: Kathryn McManus by email: kathryn.e.mcmanus.civ@mail.mil. This special notice expires 28 February 2013 at 11:59 PM (EST).

Available on or about 29 January 2013.
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ACC-APG - RTP, ATTN: AMSSB-ACR, Research Triangle Park Contracting Division, P.O. Box 12211, Research Triangle Park, NC 27709-2211
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ACC-APG - RTP ATTN: AMSSB-ACR, Research Triangle Park Contracting Division, P.O. Box 12211 Research Triangle Park NC
27709-2211
US
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Kathryn McManus, 919-549-4264

ACC-APG - RTP